Population transfer dynamics in doped GaAs quantum dot modulated by noise: role of impurity stretch

The study examines in detail the time-average excitation rate (TAER) of impurity doped GaAs quantum dot (QD) with the variation of the spatial stretch of impurity (SSI) and in the presence of Gaussian white noise (GWN). The promotion of the lowest energy state electron density was initiated by various kinds of time-varying fluctuations viz. polychromatic radiation field, pulsed field, chirped pulsed field, time-dependent impurity potential strength and time-dependent noise strength. GWN can be introduced to the doped QD by additive and multiplicative pathways. The enquiry analyses the joint influence of some parameters which ultimately govern the characteristics of the TAER curves. These parameters involve SSI, mode of application of GWN and the nature of the time-varying perturbations. The TAER plots become enriched with monotonic rise, monotonic diminish, maximization (related to the generation of large nonlinear optical properties), minimization and saturation (reflecting dynamic freezing). The findings describe how different kinds of time-varying fluctuations can fine-tune the TAER among the doped GaAs QD energy states for different extents of SSI.