Studies of the crystal structure of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x grown from liquid phase

被引：1

作者：

Razzokov, A. Sh. ^{[1
]}

Saidov, A. S. ^{[2
]}

Allabergenov, B. ^{[1
]}

Choi, B. ^{[3
,4
]}

Petrushenko, S. I. ^{[5
]}

Dukarov, S. V. ^{[5
]}

机构：

[1] Urgench State Univ, Kh Alimdjan 14, Urgench, Uzbekistan

[2] Acad Sci Uzbek, Phys Tech Inst NPO Phys Sun, Ch Aitmatova 2B, Tashkent, Uzbekistan

[3] Daegu Gyeongbuk Inst Sci & Technol DGIST, Div Elect & Informat Syst, Daegu 42988, South Korea

[4] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Interdisciplinary Engn, Daegu 42988, South Korea

[5] VN Kharkiv Natl Univ Karazin, Svobody Sq 4s, Kharkiv, Ukraine

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 612卷

关键词：

Crystallization; Solid solution; Epitaxy; Heterostructure; X-ray diffractometry; Substrate; GALLIUM-ARSENIDE;

D O I：

10.1016/j.jcrysgro.2023.127203

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The possibility of growing (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x solid solutions on a GaAs(1 0 0) substrate is shown at the temperature of the beginning of crystallization, respectively, TOC = 570 degrees C and TOC = 750 degrees C by the method of liquid-phase epitaxy from a limited tin solution-melt in the cooling rate range of 0.5-3 K/min. The content of the chemical composition and the perfection of the substrate-film boundary of epitaxial layers of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x were studied using a scanning electron microscope (SEM).X-ray diffraction studies have shown that the resulting films are single-crystal with (100) orientation and have a sphalerite structure. Using a transmission electron microscope (TEM), we obtained HR TEM images of (GaAs)1_x(ZnSe)x poly-and single-crystal samples grown at a crystallization onset temperature TOC = 750 degrees C with forced cooling at a rate of 3 deg/min. and 1 deg/min. Some electrophysical and photoelectric properties of the samples have been studied.

引用

页数：9

共 50 条

[21] Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt
A. S. Saidov
A. Sh. Razzakov
K. G. Gaimnazarov
Technical Physics Letters, 2001, 27 : 973 - 974
[22] Liquid phase epitaxial growth of (3GaAs)x{(3ZnSe)y(Ga2Se3)1-y}1-x alloy
Kaji, M
Katsuno, H
Kimura, M
Tanaka, A
Sukegawa, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1614 - 1616
[23] X-RAY LUMINESCENCE OF SINGLE-CRYSTALS OF (ZNSE)1-X(GAAS)X SOLID-SOLUTIONS
CHEPELEV, VV
TKACHUK, PN
ASTAKHOV, VN
SHCHERBINA, VI
INORGANIC MATERIALS, 1983, 19 (09) : 1260 - 1262
[24] RADIATIVE RECOMBINATION IN LASER-EXCITED (GAAS)X(ZNSE)1-X SOLID-SOLUTIONS
VOITSEKHOVSKII, AV
VYALYI, NG
DEMCHENKO, AM
KOVALENKO, VF
MARONCHUK, IE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1374 - 1376
[25] X-RAY LUMINESCENCE AND X-RAY CONDUCTIVITY MECHANISMS IN SOLID-SOLUTIONS OF (ZNSE)1-X(GAAS)X
TKACHUK, PN
CHEPELEV, VV
INORGANIC MATERIALS, 1989, 25 (03) : 446 - 448
[26] Growth of (InSb)1 − x(Sn2)x films on GaAs substrates by liquid-phase epitaxy
A. S. Saidov
M. S. Saidov
Sh. N. Usmonov
U. P. Asatova
Semiconductors, 2010, 44 : 938 - 945
[27] Liquid-phase epitaxy of solid solutions (Ge2)1-x(ZnSe)x
Saidov, AS
Razzakov, AS
Risaeva, VA
Koschanov, EA
MATERIALS CHEMISTRY AND PHYSICS, 2001, 68 (1-3) : 1 - 6
[28] Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y(Ge2)x(GaAs)y, (Si2)1 − x(CdS)x, (InSb)1 − x(Sn2)x, and CdTe1 − xSx
Sh. N. Usmonov
A. S. Saidov
A. Yu. Leiderman
Physics of the Solid State, 2014, 56 : 2401 - 2407
[29] Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1-x(ZnSe)x with Nanocrystals
Saidov, A. S.
Usmonov, Sh. N.
Saparov, D. V.
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2019, 2019
[30] Liquid phase epitaxy of (GaAs)1-x(ZnSe)x solid solution layers from a lead-based solution melt
Saidov, AS
Razzakov, AS
Gaimnazarov, KG
TECHNICAL PHYSICS LETTERS, 2001, 27 (11) : 973 - 974

← 1 2 3 4 5 →