Deep-Learning-Based Adaptive Error-Correction Decoding for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

被引:0
|
作者
Zhong, Xingwei [1 ]
Cai, Kui [1 ]
Kang, Peng [1 ]
Song, Guanghui [2 ]
Dai, Bin [1 ]
机构
[1] Singapore Univ Technol & Design, Sci Math & Technol Cluster, Singapore 487372, Singapore
[2] Xidian Univ, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China
关键词
Adaptive decoding; neural decoder; spin-torque transfer magnetic random access memory (STT-MRAM); unknown offset;
D O I
10.1109/TMAG.2023.3282804
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error rate (BER) across different dies caused by process variations, as well as the unknown resistance offset due to temperature change. Therefore, it is critical to develop effective decoding algorithms of error correction codes (ECCs) for STT-MRAM. In this article, we first propose a neural bit-flipping (BF) decoding algorithm, which can share the same trellis representation as the state-of-the-art neural decoding algorithms, such as the neural belief propagation (NBP) and neural offset min-sum (NOMS) algorithm. Hence, a neural network (NN) decoder with a uniform architecture but different NN parameters can realize all these neural decoding algorithms. Based on such a unified NN decoder architecture, we further propose a novel deep-learning (DL)-based adaptive decoding algorithm whose decoding complexity can be adjusted according to the change of the channel conditions of STT-MRAM. Extensive experimental evaluation results demonstrate that the proposed neural decoders can greatly improve the performance over the standard decoders, with similar decoding latency and energy consumption. Moreover, the DL-based adaptive decoder can work well over different channel conditions of STT-MRAM irrespective of the unknown resistance offset, with a 50% reduction of the decoding latency and energy consumption compared to the fixed decoder.
引用
收藏
页数:5
相关论文
共 38 条
  • [31] Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory
    Huang, Yan
    Cao, Kaihua
    Zhang, Kun
    Wang, Jinkai
    Shi, Kewen
    Hao, Zuolei
    Cai, Wenlong
    Du, Ao
    Yin, Jialiang
    Yang, Qing
    Li, Junfeng
    Gao, Jianfeng
    Zhao, Chao
    Zhao, Weisheng
    SCIENCE CHINA-INFORMATION SCIENCES, 2023, 66 (06)
  • [32] Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance
    Tomczak, Y.
    Swerts, J.
    Mertens, S.
    Lin, T.
    Couet, S.
    Liu, E.
    Sankaran, K.
    Pourtois, G.
    Kim, W.
    Souriau, L.
    Van Elshocht, S.
    Kar, G.
    Furnemont, A.
    APPLIED PHYSICS LETTERS, 2016, 108 (04)
  • [33] Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers
    Evarts, Eric R.
    Heindl, Ranko
    Rippard, William H.
    Pufall, Matthew R.
    APPLIED PHYSICS LETTERS, 2014, 104 (21)
  • [34] Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions
    Shuto, Yusuke
    Yamamoto, Shuu'ichirou
    Sugahara, Satoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
  • [35] Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions
    Yamamoto, Shuu'ichirou
    Shuto, Yusuke
    Sugahara, Satoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
  • [36] Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory
    Takaya, Satoshi
    Tanamoto, Tetsufumi
    Noguchi, Hiroki
    Ikegami, Kazutaka
    Abe, Keiko
    Fujita, Shinobu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
  • [37] A spin transfer torque magnetoresistance random access memory-based high-density and ultralow-power associative memory for fully data-adaptive nearest neighbor search with current-mode similarity evaluation and time-domain minimum searching
    Ma, Yitao
    Miura, Sadahiko
    Honjo, Hiroaki
    Ikeda, Shoji
    Hanyu, Takahiro
    Ohno, Hideo
    Endoh, Tetsuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
  • [38] Corrigendum to Distribution of write error rate of spin-transfer-torque magnetoresistive random access memory caused by a distribution of junction parameters [J. Magn. Magn. Mater. 563 (2022) 170012] (Journal of Magnetism and Magnetic Materials (2022) 563, (S0304885322008976), (10.1016/j.jmmm.2022.170012))
    Imamura, Hiroshi
    Arai, Hiroko
    Matsumoto, Rie
    Journal of Magnetism and Magnetic Materials, 2023, 565