Tuning the band gap of the CIGS solar buffer layer Cd1-xZnxS (x=0-1) to achieve high efficiency

被引：1
|
作者：
Tan, Zhiyuan [1 ]
Xue, Yuming [1 ]
Dai, Hongli [1 ]
Wang, Luoxin [1 ]
Hu, Xiaofeng [1 ]
Bai, Xin [1 ]
机构：
[1] Tianjin Univ Technol, Inst New Energy Intelligence Equipment, Sch Integrated Circuit Sci & Engn, Tianjin 300384, Peoples R China
来源：
OPTOELECTRONICS LETTERS | 2024年 / 20卷 / 02期
关键词：
A; THIN-FILMS;
D O I：
10.1007/s11801-024-2222-6
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
To evaluate the impact of zinc sulfate (ZnSO4) concentration on the structural properties of the films, Cd1-xZnxS thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO4 precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd1-xZnxS films was investigated. To study the impact of zinc doping content on the performance metrics of Cu(In1-xGax)Se-2 (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software.
引用
收藏
页码：100 / 106
页数：7
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