Impact of Junction Length on Supercurrent Resilience against Magnetic Field in InSb-Al Nanowire Josephson Junctions

被引:5
|
作者
Levajac, Vukan [1 ]
Mazur, Grzegorz P. [1 ]
van Loo, Nick [1 ]
Borsoi, Francesco [1 ]
Badawy, Ghada [2 ]
Gazibegovic, Sasa [2 ]
Bakkers, Erik P. A. M. [2 ]
Heedt, Sebastian [1 ]
Kouwenhoven, Leo P. [1 ]
Wang, Ji-Yin [1 ]
机构
[1] Delft Univ Technol, QuTech & Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
关键词
Josephson junction; resilient supercurrent; superconducting interference; QUANTIZED CONDUCTANCE;
D O I
10.1021/acs.nanolett.2c04485
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Semiconducting nanowire Josephson junctions representan attractiveplatform to investigate the anomalous Josephson effect and detecttopological superconductivity. However, an external magnetic fieldgenerally suppresses the supercurrent through hybrid nanowire junctionsand significantly limits the field range in which the supercurrentphenomena can be studied. In this work, we investigate the impactof the length of InSb-Al nanowire Josephson junctions on the supercurrentresilience against magnetic fields. We find that the critical parallelfield of the supercurrent can be considerably enhanced by reducingthe junction length. Particularly, in 30 nm long junctions supercurrentcan persist up to 1.3 T parallel field approaching the criticalfield of the superconducting film. Furthermore, we embed such shortjunctions into a superconducting loop and obtain the supercurrentinterference at a parallel field of 1 T. Our findings are highly relevantfor multiple experiments on hybrid nanowires requiring a magnetic-field-resilientsupercurrent.
引用
收藏
页码:4716 / 4722
页数:7
相关论文
共 22 条
  • [21] VALIDITY OF THE RESISTIVELY SHUNTED JOSEPHSON JUNCTION MODEL FOR SMALL-AREA SUPERCONDUCTOR-NORMAL-SUPERCONDUCTOR JUNCTIONS IN A MAGNETIC-FIELD
    BARNES, SE
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6438 - 6440
  • [22] Switching-field stabilization against effects of high-temperature annealing in magnetic tunnel junctions using thermally reliable NiFe100-x/Al-oxide/Ta free layer
    Fukumoto, Y
    Numata, H
    Suemitsu, K
    Nagahara, K
    Ohshima, N
    Amano, M
    Hada, H
    Yoda, H
    Tahara, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (5A): : 3829 - 3834