Anti-ambipolar transport and logic operation in two-dimensional field-effect transistors using in-series integration of GeAs and SnS2

Germanium arsenide (GeAs) from the IV-V semiconductor family has drawn attention for its anisotropic optical and electrical characteristics as a robust p-type semiconductor with high mobility. Despite its potential, the scope of applications for two-dimensional (2D) GeAs remains limited. In this study, we investigate the in-series integration of GeAs and SnS2 for complementary inverter operation, a crucial element in logic circuits. Moreover, the resulting in-series field-effect transistors reveal a previously undocumented anti-ambipolar behavior in this configuration, with a peak-to-valley ratio exceeding 5000 at a drain-source bias of 2 V. This anti-ambipolar characteristic operates regardless of the direction of current flow, which is rarely seen in conventional anti-ambipolar transistors built with hetero-stacked p-n junctions. Moreover, the in-series structure demonstrates stable operation as a complementary inverter, highlighting the versatile potential of p-type 2D GeAs in diverse optoelectronic applications. This work contributes insights into the transport characteristics of GeAs and its interconnected arrangement with SnS2, offering valuable implications for the development of advanced 2D material-based devices.