Electronic Properties of Chiral IrGe4 Studied by Angle Resolved Photoemission Spectroscopy and Band Structure Calculation

被引：1

作者：

Hayashi, Genki ^{[1
]}

Shimaiwa, Taiki ^{[1
]}

Okawa, Mario ^{[1
]}

Nakamura, Naoki ^{[2
]}

Higashinaka, Ryuji ^{[2
]}

Matsuda, Tatsuma D. ^{[2
]}

Aoki, Yuji ^{[2
]}

Kitamura, Miho ^{[3
,4
]}

Shiga, Daisuke ^{[5
]}

Kumigashira, Hiroshi ^{[5
]}

Kopciuszynski, Marek ^{[6
]}

Barinov, Alexey ^{[6
]}

Saini, Naurang L. ^{[7
]}

Mizokawa, Takashi ^{[1
]}

机构：

[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan

[2] Tokyo Metropolitan Univ, Dept Phys, Hachioji, Tokyo 1920397, Japan

[3] Natl Inst Quantum Sci & Technol QST, Sendai 9808579, Japan

[4] High Energy Accelerator Res Org KEK, Photon Factory, Inst Mat Struct Sci, Tsukuha 3050801, Japan

[5] Tohoku Univ, Inst Multidisciplinary Res Adv Mat IMRAM, Sendai 9808577, Japan

[6] Sincrotrone Trieste SCpA, Area Sci Pk, I-34012 Trieste, Italy

[7] Univ Roma La Sapienza, Dept Phys, I-00185 Rome, Italy

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2024年 / 93卷 / 01期

关键词：

CRYSTAL;

D O I：

10.7566/JPSJ.93.014702

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated band structure of chiral IrGe4 by means of angle-resolved photoemission spectroscopy (ARPES) and band structure calculation. The band structure calculation predicts Kramers-Weyl degeneracy at the time reversal invariant momentum points. Although IrGe4 does not have a well-defined cleavage plane, we could observe momentum-dependent ARPES intensity modulations by ARPES. The ARPES intensity near the Fermi level was enhanced around the M and K points where the Ge 4p bands are located at about 0.3 eV below the Fermi level both in the calculation and in the experiment. Although the overall band dispersion of the Ge 4p and Ir 5d bands agrees with the calculation, surface states between the Kramers-Weyl points are not clearly observed probably due to roughness of the fractured surface.

引用

页数：6

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