High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate

This work reports record-high three-terminal on-state drain-source breakdown voltage (BVDS) of -735 V in p-channel GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with a drain field-plate (DFP). High-k and wide-gap Al2O3 was deposited as the gate oxide and surface passivation by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Good source/drain ohmic contacts were obtained by devising an Mg-doped p(++)-GaN capper. Enhanced two-dimension hole gas (2DHG) characteristics and current densities have also been achieved by the devised p-GaN/GaN/AlN/Al0.3Ga0.7N heterostructure. The present p-channel GaN MOS-HFET design with (without) DFP has demonstrated superior on/off current ratio (I-on/I-off) of 2 x 10(6) (9.2 x 10(5)), maximum drain-source current density (I-DS,I-max) of -9.5 (-10.6) mA/mm at V-DS = 20 V, two-terminal off-state gate-drain breakdown voltage (BVGD) of 710 (520) V, and BVDS of -735 (-545) V, respectively. The present design is suitable for applications in high-voltage complementary power-switching circuits of electric vehicle (EV) electronics.