High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET

被引：1

作者：

Noge, Yuichi ^{[1
]}

Shoyama, Masahito ^{[1
]}

机构：

[1] Kyushu Univ, Fac Informat Sci & Elect Engn, 744 Moto oka,Nishi ku, Fukuoka 8190395, Japan

来源：

IEEJ JOURNAL OF INDUSTRY APPLICATIONS | 2023年 / 12卷 / 03期

基金：

日本科学技术振兴机构;

关键词：

double pulse test; gate drive; SiC MOSFET; switching loss;

D O I：

10.1541/ieejjia.22007696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type AGD utilizes the induced voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recent improvements in the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and AGD are experimentally investigated via a double pulse test setup. The switching setup condition is 700 V/80 A. This paper describes the development of the AGD circuit and experimental results. The over-shoot and ringing of the Vds and Is are reduced using the AGD. Moreover, the switching loss is simultaneously reduced.

引用

页码：384 / 391

页数：8

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