A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions

被引：6

作者：

Feng, Ning ^{[1
]}

Li, Hao ^{[1
]}

Zhang, Lining ^{[1
]}

Ji, Ning ^{[1
]}

Zhang, Fangxi ^{[1
]}

Zhu, Xiaobao ^{[1
]}

Shang, Zongwei ^{[2
]}

Cai, Puyang ^{[2
]}

Li, Ming ^{[2
]}

Wang, Runsheng ^{[2
]}

Huang, Ru ^{[2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[2] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 02期

关键词：

Silicon; Tunneling; Mathematical models; Iron; Integrated circuit modeling; Switches; Semiconductor device modeling; Ferroelectric tunnel junction; compact model; dynamic; self-consistent; minor loop;

D O I：

10.1109/LED.2022.3233456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we proposed a dynamic compact model for metal-ferroelectric-semiconductor (MFS) ferroelectric tunnel junctions (FTJ) based on their device physics. The voltage control over dynamic polarizations and the semiconductor surface potentials is achieved for full-region operations, supporting complex FTJ state transitions. A unified and smooth current model across different regions was proposed by formulating tunneling transports in FTJ with complicated barrier shapes from the first-principle tunneling theory. The model was extensively verified with both experimental data and technology computer-aided design (TCAD) simulations, featuring accurate descriptions of multi-states, frequency dependent programming, and circuit simulations.

引用

页码：261 / 264

页数：4

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