CoFeBX layers for MgO-based magnetic tunnel junction sensors with improved magnetoresistance and noise performance

被引：3
|
作者：
Matos, F. [1 ,2 ]
Macedo, R. [1 ]
Freitas, P. P. [1 ,2 ]
Cardoso, S. [1 ,2 ]
机构：
[1] INESC Microsistemas & Nanotecnol, Rua Alves Redol 9, P-1000029 Lisbon, Portugal
[2] Univ Lisbon, Inst Super Tecn, Lisbon, Portugal
来源：
AIP ADVANCES | 2023年 / 13卷 / 02期
关键词：
DEPENDENCE;
D O I：
10.1063/9.0000559
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Magnetoresistive sensors have been enthusiastically selected for applications requiring magnetic field detection with small footprint sensors. The optimisation of the sensor response includes using soft magnetic free layers, based on CoFeB and NiFe alloys. Here we report the TMR and noise performance of magnetically saturated in-plane MTJ sensors including CoFeBTa and CoFeSiB soft magnetic films as free layers (FL). Assessing magneto-crystalline anisotropy mu H-0(k) values of 2.1 and 0.7 mT in CoFeB 2.5 (nm)/Ru 0.2/CoFeBTa 4 and CoFeB 3/Ru 0.2/CoFeSiB 4 compared to 1.7 mT in CoFeB 2.5/Ru 0.2/NiFe 4, together with an improved magnetoresistance of 230% in CoFeBSi comparing with 170% (NiFe) with superior noise characteristics, with Hooge parameter of alpha(H) = 7 x 10(-11) mu m(2).
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Effect of Deposition Conditions and Annealing Temperature on Tunnel Magnetoresistance and the Structure of MgO-Based Double-Barrier Magnetic Tunnel Junctions
    Feng, Wen
    Fowley, Ciaran
    Bernert, Kerstin
    Sluka, Volker
    Kowalska, Ewa
    Aleksandrov, Yuriy
    Lindner, Juergen
    Fassbender, Juergen
    Gan, Hua Dong
    Kunz, Annette
    Huebner, Rene
    Coey, J. M. D.
    Deac, Alina M.
    IEEE TRANSACTIONS ON MAGNETICS, 2015, 51 (11)
  • [42] MgO-based tunnel junction material for high-speed toggle magnetic random access memory
    Dave, Renu W.
    Steiner, G.
    Slaughter, J. M.
    Sun, J. J.
    Craigo, B.
    Pietambaram, S.
    Smith, K.
    Grynkewich, G.
    DeHerrera, M.
    Akerman, J.
    Tehrani, S.
    IEEE TRANSACTIONS ON MAGNETICS, 2006, 42 (08) : 1935 - 1939
  • [43] DC and AC Characterization of MgO Magnetic Tunnel Junction Sensors
    Arikan, Mustafa
    Ingvarsson, Snorri
    Carter, Matthew
    Xiao, Gang
    IEEE TRANSACTIONS ON MAGNETICS, 2013, 49 (11) : 5469 - 5474
  • [44] Effect of film roughness in MgO-based magnetic tunnel junctions
    Shen, WF
    Mazumdar, D
    Zou, XJ
    Liu, XY
    Schrag, BD
    Xiao, G
    APPLIED PHYSICS LETTERS, 2006, 88 (18)
  • [45] Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
    Ma, Q. L.
    Feng, J. F.
    Feng, Gen
    Oguz, K.
    Han, X. F.
    Coey, J. M. D.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (01) : 108 - 111
  • [46] Comparison of performance among five types of tunneling magnetoresistance linear sensing units based on MgO magnetic tunnel junction
    Han Xiu-Feng
    Zhang Yu
    Feng Jia-Feng
    Chen Chuan
    Deng Hui
    Huang Hui
    Guo Jing-Hong
    Liang Yun
    Si Wen-Rong
    Jiang An-Feng
    Wei Hong-Xiang
    ACTA PHYSICA SINICA, 2022, 71 (23)
  • [47] Electroforming, magnetic and resistive switching in MgO-based tunnel junctions
    Teixeira, J. M.
    Ventura, J.
    Fermento, R.
    Araujo, J. P.
    Sousa, J. B.
    Wisniowski, P.
    Freitas, P. P.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (10)
  • [48] Flexible MgO-based Magnetic Tunnel Junctions on Silicon Substrate
    Amara, S.
    Sevilla, G. A. Torres
    Ivanov, I.
    Gerhard, J.
    Jaiswal, S.
    Mustafa, H. Muhammad
    Klaeui, M.
    Kosel, J.
    2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG), 2018,
  • [49] Review of Noise Sources in Magnetic Tunnel Junction Sensors
    Lei, Z. Q.
    Li, G. J.
    Egelhoff, William F., Jr.
    Lai, P. T.
    Pong, Philip W. T.
    IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (03) : 602 - 612
  • [50] Giant Perpendicular Magnetic Anisotropy Enhancement in MgO-Based Magnetic Tunnel Junction by Using Co/Fe Composite Layer
    Vojacek, Libor
    Ibrahim, Fatima
    Hallal, Ali
    Dieny, Bernard
    Chshiev, Mairbek
    PHYSICAL REVIEW APPLIED, 2021, 15 (02)
12345