CoFeBX layers for MgO-based magnetic tunnel junction sensors with improved magnetoresistance and noise performance

被引：3
|
作者：
Matos, F. [1 ,2 ]
Macedo, R. [1 ]
Freitas, P. P. [1 ,2 ]
Cardoso, S. [1 ,2 ]
机构：
[1] INESC Microsistemas & Nanotecnol, Rua Alves Redol 9, P-1000029 Lisbon, Portugal
[2] Univ Lisbon, Inst Super Tecn, Lisbon, Portugal
来源：
AIP ADVANCES | 2023年 / 13卷 / 02期
关键词：
DEPENDENCE;
D O I：
10.1063/9.0000559
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Magnetoresistive sensors have been enthusiastically selected for applications requiring magnetic field detection with small footprint sensors. The optimisation of the sensor response includes using soft magnetic free layers, based on CoFeB and NiFe alloys. Here we report the TMR and noise performance of magnetically saturated in-plane MTJ sensors including CoFeBTa and CoFeSiB soft magnetic films as free layers (FL). Assessing magneto-crystalline anisotropy mu H-0(k) values of 2.1 and 0.7 mT in CoFeB 2.5 (nm)/Ru 0.2/CoFeBTa 4 and CoFeB 3/Ru 0.2/CoFeSiB 4 compared to 1.7 mT in CoFeB 2.5/Ru 0.2/NiFe 4, together with an improved magnetoresistance of 230% in CoFeBSi comparing with 170% (NiFe) with superior noise characteristics, with Hooge parameter of alpha(H) = 7 x 10(-11) mu m(2).
引用
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页数：5
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