A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization

An a-IGZO based ferroelectric-TFT (FeTFT) is promising in future BEOL-compatible architecture designs. Despite its excellent nonvolatility, a complicated coupling of intrinsic transistor properties, trapping dynamics and ferroelectric effects has been reported and hinders the in-depth understanding of high temperature (T) reliability. To address this issue, a surface potential based compact model has been developed by combining Preisach theory, disorder physics and Newton correction. It is calibrated to experiments under various voltages (V) and T (up to 100 C-?). T-dependent transport mechanism is validated with an effective mobility extracted, and a memory window (MW) increases with T resulting from coupling effects. Besides, pulse width (PW) dependent ferroelectric switching dynamics are studied via the Monte Carlo method, predicting a possible decrease of MW at small PW and high T. With such a physics-based modeling approach to accurate device characterization, it assists T-aware circuit design with reliability considerations.