High-Efficiency Ka-Band Active Frequency Doubler MMIC in 150 nm GaN/SiC HEMT Technology

被引：0

作者：

Vissers, Rob ^{[1
]}

Zirath, Herbert ^{[1
]}

Lasser, Gregor ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

2023 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS, INMMIC | 2023年

关键词：

Balanced Frequency Doubler; GaN HEMT Technology; High-Efficiency; Ka-Band; Marchand Balun; Monolithic Microwave Integrated Circuit (MMIC);

D O I：

10.1109/INMMIC57329.2023.10321791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the design of an active single-balanced push-push frequency doubler Monolithic Microwave Integrated Circuit (MMIC) in 150 nm depletion mode GaN/SiC HEMT technology is discussed. The design yields a conversion gain of 7.6 dB with a half-power (3-dB) bandwidth spanning from 28.4 GHz up to 31.4 GHz for an input power of 15 dBm. On top of that, the maximum Power-Added Efficiency (PAE) is 10.2% and the harmonic rejection is larger than 27.4 dB at 30 GHz.

引用

页数：3

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