High-Efficiency Ka-Band Active Frequency Doubler MMIC in 150 nm GaN/SiC HEMT Technology

In this work, the design of an active single-balanced push-push frequency doubler Monolithic Microwave Integrated Circuit (MMIC) in 150 nm depletion mode GaN/SiC HEMT technology is discussed. The design yields a conversion gain of 7.6 dB with a half-power (3-dB) bandwidth spanning from 28.4 GHz up to 31.4 GHz for an input power of 15 dBm. On top of that, the maximum Power-Added Efficiency (PAE) is 10.2% and the harmonic rejection is larger than 27.4 dB at 30 GHz.