Vertically aligned ZnO nanorods on porous silicon substrates: Effect of growth time

被引:0
|
作者
R.Shabannia [1 ]
机构
[1] Department of Physics,College of Science,Babol University of Technology
关键词
Zn O nanorods; Porous silicon; Nanocrystalline materials; Crystal structure; Chemical bath deposition;
D O I
暂无
中图分类号
TB383.1 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
Vertically aligned ZnO nanorods were successfully grown on porous silicon(PS) substrates by chemical bath deposition at a low temperature.X-ray diffraction, field-emission scanning electron microscopy(FESEM), transmission electron microscopy(TEM), and photoluminescence(PL)analyses were carried out to investigate the effect of growth duration(2 h to 8 h) on the optical and structural properties of the aligned ZnO nanorods. Strong and sharp ZnO(0 0 2) peaks of the ZnO nanorods proved that the aligned ZnO nanorods were preferentially fabricated along the c-axis of the hexagonal wurtzite structure. FESEM images demonstrated that the Zn O nanorod arrays were well aligned along the c-axis and perpendicular to the PS substrates regardless of the growth duration. The TEM image showed that the top surfaces of the ZnO nanorods were round with a smooth curvature. PL spectra demonstrated that the ZnO nanorods grown for 5 h exhibited the sharpest and most intense PL peaks within the ultraviolet range among all samples.
引用
收藏
页码:95 / 100
页数:6
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