Graphene-like Be3X2(X=C,Si, Ge,Sn):A new family of two-dimensional topological insulators

被引:0
|
作者
宋玲玲 [1 ]
张礼智 [2 ]
官雨柔 [1 ]
卢建臣 [1 ]
闫翠霞 [1 ]
蔡金明 [1 ]
机构
[1] Faculty of Materials Science and Engineering,Kunming University of Science and Technology
[2] Institute of Physics,Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
Dirac materials; topological insulator; first-principles calculation; spin–orbit coupling;
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using first-principle calculations, we predict a new family of stable two-dimensional(2 D) topological insulators(TI),monolayer Be3X2(X = C,Si, Ge, Sn) with honeycomb Kagome lattice. Based on the configuration of Be3C2, which has been reported to be a 2 D Dirac material, we construct the other three 2 D materials and confirm their stability according to their chemical bonding properties and phonon-dispersion relationships. Because of their tiny spin-orbit coupling(SOC)gaps, Be3C2and Be3Si2are 2 D Dirac materials with high Fermi velocity at the same order of magnitude as that of graphene.For Be3 Ge2 and Be3Sn2,the SOC gaps are 1.5 meV and 11.7 meV, and their topological nontrivial properties are also confirmed by their semi-infinite Dirac edge states. Our findings not only extend the family of 2 D Dirac materials, but also open an avenue to track new 2 DTI.
引用
收藏
页码:317 / 320
页数:4
相关论文
共 50 条
  • [41] Electrically tunable exchange splitting in bilayer graphene on monolayer Cr2X2Te6 with X = Ge, Si, and Sn
    Zollner, Klaus
    Gmitra, Martin
    Fabian, Jaroslav
    NEW JOURNAL OF PHYSICS, 2018, 20
  • [42] Epitaxy of two-dimensional ErSixGe2-x on Si(111) (5 × 5)-Ge observed by LEED and HREELS
    Lab de Physique et de Spectroscopie, Electronique, Mulhouse, France
    Surf Sci, 2 (350-357):
  • [43] Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in GaGeTe-type structures
    Pielnhofer, F.
    Menshchikova, T. V.
    Rusinov, I. P.
    Zeugner, A.
    Sklyadneva, I. Yu.
    Heid, R.
    Bohnen, K. -P.
    Golub, P.
    Baranov, A. I.
    Chulkov, E. V.
    Pfitzner, A.
    Ruck, M.
    Isaeva, A.
    JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (19) : 4752 - 4762
  • [44] Searching for new two-dimensional spintronic materials: Doping-induced magnetism in graphene-like SrS monolayer
    Nguyen, Duy Khanh
    Guerrero-Sanchez, J.
    Hoat, D. M.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2024, 162
  • [45] Two-dimensional TeX(X=C, Si, Ge) monolayers with strong intrinsic electric field for efficiency hydrogen evolution reaction
    Qiao, Ning-Han
    Yang, Chuan-Lu
    Wang, Mei-Shan
    Ma, Xiao-Guang
    SURFACES AND INTERFACES, 2022, 31
  • [46] Theoretical prediction of the structural and electronic properties of pseudocubic X3As4 (X = C, Si, Ge and Sn) compounds
    Charifi, Z.
    Baaziz, H.
    Hamad, B.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (12-13) : 1632 - 1637
  • [47] Prediction of intrinsic two-dimensional topological insulators in Y3-/X3Y4-tetrahydroxybenzene metal-organic networks
    Yin, Yiyang
    Gao, Yixuan
    Zhang, Lizhi
    Zhang, Yu-Yang
    Du, Shixuan
    SCIENCE CHINA-MATERIALS, 2024, 67 (05) : 1202 - 1208
  • [48] Topological states in a two-dimensional metal alloy in Si surface: BiAg/Si(111)-4 x 4 surface
    Zhang, Xiaoming
    Cui, Bin
    Zhao, Mingwen
    Liu, Feng
    PHYSICAL REVIEW B, 2018, 97 (08)
  • [49] The optoelectronic properties in two-dimensional sliding ferroelectric material XC (X = Ge, Si) under strain
    Zou, Qian
    Sun, Jieru
    Cui, Yongxin
    Ma, Junhao
    Lu, Hong-an
    Wu, Yi
    Zhong, Chonggui
    Fu, Huailiang
    Zhang, Lei
    Zhou, Pengxia
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 193
  • [50] First-principles study on the electronic and optical properties of two-dimensional graphene-like Zn1-xVxO (x=0.0625, 0.125) monolayer
    Zhao, Huifeng
    Miao, Yurun
    Wang, Zhidan
    Zhang, Min
    Zhou, Cui
    Wang, Hai
    Chen, Ling
    Wan, Miao
    He, Kaihua
    Wang, Qingbo
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 113 : 143 - 151