Investigation of trap states in Al2O3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

被引：0
|
作者：
张鹏 [1 ]
赵胜雷 [2 ]
薛军帅 [2 ]
祝杰杰 [1 ]
马晓华 [1 ]
张进成 [2 ]
郝跃 [2 ]
机构：
[1] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology,Xidian University
[2] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University
来源：
Chinese Physics B | 2015年 / 12期
基金：
中国国家自然科学基金;
关键词：
InAlN; trapping; frequency-dependent conductance; metal–oxide–semiconductor high-electronmobility transistors;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
In this paper the trapping effects in Al2O3/In0.17Al0.83N/Ga N MOS-HEMT(here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/In Al N and In Al N/Ga N interface. Trap states in In Al N/Ga N heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas(2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the In Al N barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.
引用
收藏
页码：509 / 512
页数：4
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