Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

被引：0

作者：

刘宇新 ^{[1
,2
]}

牛雪翻 ^{[1
,2
]}

张仁聪 ^{[1
,2
]}

张庆华 ^{[1
,2
]}

滕静 ^{[1
,2
]}

李永庆 ^{[1
,2
]}

机构：

[1] Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

[2] School of Physical Sciences,University of Chinese Academy of Sciences

来源：

Chinese Physics Letters | 2021年 / 38卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report an experimental study of electron transport properties of MnSe/(Bi,Sb)Teheterostructures,in which MnSe is an antiferromagnetic insulator,and(Bi,Sb)Teis a three-dimensional topological insulator(TI).Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances.Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance,which exceeds 0.1 e~2/h at temperature T=1.6 K and magnetic field μH=5 T,even though only the top TI surface is in proximity to MnSe.This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.

引用

页码：105 / 109

页数：5

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