1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

被引：0

作者：

赵胜雷 ^{[1
]}

王之哲 ^{[2
]}

陈大正 ^{[1
]}

王茂俊 ^{[3
]}

戴扬 ^{[4
]}

马晓华 ^{[1
]}

张进成 ^{[1
]}

郝跃 ^{[1
]}

机构：

[1] Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University

[2] China Electronic Product Reliability and Environmental Testing Research Institute

[3] Institute of Microelectronics, Peking University

[4] School of Information Science and Technology, Northwest University

来源：

Chinese Physics B | 2019年 / 28卷 / 02期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN/AlGaN DH HEMTs; circular structure; breakdown voltage;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor（DH HEMT） with a gate-drain spacing L;= 18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of meritV;/RON for the circular HEMT is as high as 1.03 ×10;V;·Ω;·cm;. The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.

引用

页码：391 / 394

页数：4

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