Top contact organic field effect transistors fabricated using a photolithographic process

This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho-tolithographic process.The semiconductor layer is protected by a passivation layer.Through photolithographic and etching processes,parts of the passivation layer are etched off to form source/drain electrode patterns.Combined with conventional evaporation and lift-off techniques,organic field effect transistors with a top contact are fabricated suc-cessfully,whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.