Graded Heterojunction of AlGaInP High-brightness Light Emitting Diodes

被引：0
|
作者：
LIU Lu~1
2.Lab.of Photo-electron.Mater.and Technol.
3.Quantum and Electron Institute
机构：
来源：
SemiconductorPhotonicsandTechnology | 2004年 / 02期
关键词：
AlGaInP; Heterojunction; LED;
D O I：
暂无
中图分类号：
O475 [P-N结];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities.Through the experiments,it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.
引用
收藏
页码：86 / 92
页数：7
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