Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

被引：0

作者：

丁进军 ^{[1
,2
]}

吴少兵 ^{[1
]}

杨晓非 ^{[1
]}

朱涛 ^{[2
]}

机构：

[1] School of Optical and Electronic Information,Huazhong University of Science and Technology

[2] Institute of Physics and Beijing National Laboratory for Condensed Matter Physics,Chinese Academy of Sciences

来源：

Chinese Physics B | 2015年 / 24卷 / 02期

基金：

中国国家自然科学基金;

关键词：

anomalous Hall effect; weak localization; CoFeB thin films;

D O I：

暂无

中图分类号：

O484.4 [薄膜的性质];

学科分类号：

080501 ; 1406 ;

摘要：

An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.

引用

页码：372 / 375

页数：4

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