Optical Characterization of GaN Grown by Plasma Source MBE

被引：0
|
作者：
ZHANG Yong-gang
机构：
来源：
SemiconductorPhotonicsandTechnology | 2000年 / 01期
关键词：
GaN; Spectrum; MBE;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
By using spectroscopic photoconductance, transmittance and luminescence methods,the optical characterization of GaN grown by plasma source MBE have been evaluated. The imperfection of the epitaxial layer deduced from the measured results have been discussed. The transient responses of the photoconductive detectors have been measured. Two time constants of 0.17 ms and 6.85 ms at room temperature are deduced from the measured results. The origins have also been discussed.
引用
收藏
页码：23 / 28
页数：6
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