GROWTH MECHANISM OF TiC WHISKERS PREMRED BY A MODIFIED CHEMICAL VAPOR DEPOSITION METHOD

被引：0
|
作者：
J.S. Pan and Y. W. Yuan (Department of Materials Science and Engineering
机构：
来源：
ActaMetallurgicaSinica(EnglishLetters) | 1999年 / 03期
关键词：
TiC; whisker; chemical vapor deposition (CVD); growth mechanism;
D O I：
暂无
中图分类号：
TG113 [金相学（金属的组织与性能）];
学科分类号：
080502 ;
摘要：
High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.
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页码：278 / 282
页数：5
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