Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

被引：0
|
作者：
LI Cheng
机构：
来源：
Semiconductor Photonics and Technology | 2005年 / 04期
关键词：
Photoluminescence; Boron-doped silicon layer; Dislocations;
D O I：
暂无
中图分类号：
TN304.12 [];
学科分类号：
摘要：
Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band（from 0.75eV to 0.90eV） including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.
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页码：11 / 13
页数：3
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