Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

被引:0
|
作者
邹军
周圣明
张霞
苏风莲
李效民
徐军
机构
[1] Graduate School of the Chinese Academy of Science, Beijing 100039 , Shanghai 201800 ,Anhui 100086 , Anhui 100086 ,Anhui 100086 , Shanghai 201800
[2] Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences,Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050 4 Anhui University,Anhui U
关键词
ZnO; LiAlO2; substrate; rate; In; Deposition of ZnO thin films on;
D O I
暂无
中图分类号
O472.3 []; O484.41 [];
学科分类号
070205 ; 0803 ; 080501 ; 0809 ; 080903 ;
摘要
Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 °C. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.
引用
收藏
页码:494 / 496
页数:3
相关论文
共 50 条
  • [41] Anisotropic intrinsic and extrinsic stresses in epitaxial wurtzitic GaN thin film on γ-LiAlO2(100)
    Eiper, E
    Hofmann, A
    Gerlach, JW
    Rauschenbach, B
    Keckes, J
    JOURNAL OF CRYSTAL GROWTH, 2005, 284 (3-4) : 561 - 566
  • [42] Growth and defects of novel substrate material LiAlO2 crystal
    Xu, Ke
    Deng, Peizhen
    Zhou, Yongzong
    Zhou, Guoqing
    Xu, Jun
    Guangxue Xuebao/Acta Optica Sinica, 1998, 18 (03): : 381 - 384
  • [43] γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy
    Chinese Acad of Sciences, Shanghai, China
    J Cryst Growth, 1-2 (127-132):
  • [44] Strain relaxation in AlN/GaN bilayer films grown on γ-LiAlO2(100) for nanoelectromechanical systems
    Takagaki, Y
    Sun, YJ
    Brandt, O
    Ploog, KH
    APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4756 - 4758
  • [45] Vertically Aligned Single-Crystal ZnO Nanotubes Grown on γ-LiAlO2 (100) Substrate by Metalorganic Chemical Vapor Deposition (vol 46, pg L730, 2007)
    Zhang, Guoqiang
    Adachi, Masahiko
    Gangil, Sandip
    Nakamura, Atsushi
    Temmyo, Jiro
    Matsui, Yoshio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
  • [46] Growth and Characterization of Vertically Aligned Nonpolar [1(1)over-bar00] Orientation ZnO Nanostructures on (100) γ-LiAlO2 Substrate
    Chen, Chenlong
    Lan, Yan-Ting
    Chou, Mitch M. C.
    Hang, Da-Ren
    Yan, Tao
    Feng, He
    Lee, Chun-Yu
    Chang, Shih-Yu
    Li, Chu-An
    CRYSTAL GROWTH & DESIGN, 2012, 12 (12) : 6208 - 6214
  • [47] Polarization and temperature dependence of photoluminescence of m-plane GaN grown on γ-LiAlO2 (100) substrate
    Liu, B.
    Kong, J. Y.
    Zhang, R.
    Xie, Z. L.
    Fu, D. Y.
    Xiu, X. Q.
    Chen, P.
    Lu, H.
    Han, P.
    Zheng, Y. D.
    Zhou, S. M.
    APPLIED PHYSICS LETTERS, 2009, 95 (06)
  • [48] Study on the preparation process of γ-LiAlO2 crystal substrate used for epitaxial growth of GaN thin film
    College of Material Science and Engineering, Harbin University of Science and Technology, Harbin, China
    Rengong Jingti Xuebao, 6 (1498-1503): : 1498 - 1503
  • [49] Nonpolar m- and a-plane GaN thin films grown on γ-LiAlO2 substrates
    Zou, Jun
    Xiang, Weidong
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (12) : 3285 - 3288
  • [50] Sputter deposition of ZnO thin films at high substrate temperatures
    Eisermann, S.
    Sann, J.
    Polity, A.
    Meyer, B. K.
    THIN SOLID FILMS, 2009, 517 (20) : 5805 - 5807