Band alignment of Ga2O3/6H-SiC heterojunction

被引：0

作者：

常少辉 ^{[1
]}

陈之战 ^{[1
]}

黄维 ^{[1
]}

刘学超 ^{[1
]}

陈博源 ^{[1
]}

李铮铮 ^{[1
]}

施尔畏 ^{[1
]}

机构：

[1] Shanghai Institute of Ceramics,Chinese Academy of Sciences

来源：

Chinese Physics B | 2011年 / 11期

基金：

中国国家自然科学基金;

关键词：

band alignment; Ga2O3/6H-SiC; synchrotron radiation photoelectron spectroscopy;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

摘要：

A high-quality GaOthin film is deposited on an SiC substrate to form a heterojunction structure.The band alignment of the GaO/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the GaO/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction.The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV,which indicate a type-Ⅱband alignment.This provides useful guidance for the application of GaO/6H-SiC electronic devices.

引用

页码：382 / 385

页数：4

共 50 条

[31] Ga bound excitons in 6H-SiC
Henry, A.
Hallin, C.
Ivanov, I.G.
Bergman, J.P.
Kordina, O.
Monemar, B.
Janzen, E.
Materials Science Forum, 1995, 196-201 (pt 1): : 91 - 96
[32] Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 p-n heterojunction
Ghosh, Sahadeb
Baral, Madhusmita
Kamparath, Rajiv
Choudhary, R. J.
Phase, D. M.
Singh, S. D.
Ganguli, Tapas
APPLIED PHYSICS LETTERS, 2019, 115 (06)
[33] Band alignment characterizations of grafted GaAs/ ( 2 ¯ 01 ) Ga2O3 heterojunction via x-ray photoelectron spectroscopy
Lu, Yi
Zhou, Jie
Khandelwal, Vishal
Adamo, Carolina
Marshall, Patrick
Gong, Jiarui
Liu, Yang
Ng, Tien Khee
Li, Xiaohang
Ooi, Boon S.
Gambin, Vincent
Ma, Zhenqiang
Journal of Applied Physics, 1600, 136 (24):
[34] Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature
Zhou, Shun
Liu, Hao
Dong, Linpeng
Liu, Weiguo
Song, Shigeng
Liu, Wenjun
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (03):
[35] Determination of type-ΙΙ band alignment β-Ga2O3/GaAs heterojunction interface by x-ray photoelectron spectroscopy
Ji, Xueqiang
Yue, Jianying
Qi, Xiaohui
Meng, Dongdong
Chen, Zhengwei
Li, Peigang
JOURNAL OF APPLIED PHYSICS, 2021, 130 (07)
[36] Band alignment characterizations of grafted GaAs/(201) Ga2O3 heterojunction via x-ray photoelectron spectroscopy
Lu, Yi
Zhou, Jie
Khandelwal, Vishal
Adamo, Carolina
Marshall, Patrick
Gong, Jiarui
Liu, Yang
Ng, Tien Khee
Li, Xiaohang
Ooi, Boon S.
Gambin, Vincent
Ma, Zhenqiang
JOURNAL OF APPLIED PHYSICS, 2024, 136 (24)
[37] Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment
刘浩
刘文军
肖懿凡
刘超超
吴小晗
丁士进
Chinese Physics Letters, 2020, (07) : 118 - 121
[38] Determination of the conduction band discontinuity in an n-type 3C-SiC/6H-SiC heterojunction.
Smith, SR
Evwaraye, AO
Steckl, AJ
Yuan, C
Mitchel, WC
Roth, MD
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 317 - 319
[39] Influence of annealing temperature on structure and photoelectrical performance of β-Ga2O3/4H-SiC heterojunction photodetectors
Yu, Jiangang
Nie, Zizhuo
Dong, Linpeng
Yuan, Lei
Li, Dejun
Huang, Yu
Zhang, Lichun
Zhang, Yuming
Jia, Renxu
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 798 : 458 - 466
[40] Band alignment and electronic structure of β-Ga2O3 (-201) grown on Si- and C-faces of 4H-SiC substrates
Xu, Bei
Hu, Jichao
Zhang, Qi
He, Xiaomin
Wang, Xi
Li, Yao
Zhang, Chao
Dong, Linpeng
Pu, Hongbin
VACUUM, 2024, 224

← 1 2 3 4 5 →