Band alignment of Ga2O3/6H-SiC heterojunction

A high-quality GaOthin film is deposited on an SiC substrate to form a heterojunction structure.The band alignment of the GaO/6H-SiC heterojunction is studied by using synchrotron radiation photoelectron spectroscopy. The energy band diagram of the GaO/6H-SiC heterojunction is obtained by analysing the binding energies of Ga 3d and Si 2p at the surface and the interface of the heterojunction.The valence band offset is experimentally determined to be 2.8 eV and the conduction band offset is calculated to be 0.89 eV,which indicate a type-Ⅱband alignment.This provides useful guidance for the application of GaO/6H-SiC electronic devices.