LASER RECRYSTALLIZED CMOS/SOI DEVICES

被引：0
|
作者：
沈宗雍
林成鲁
方芳
邹世昌
机构：
[1] Academia Sinica
[2] Shanghai Institute of Metallurgy
来源：
ScienceBulletin | 1986年 / 15期
关键词：
CMOS; MOSFET; LASER RECRYSTALLIZED CMOS/SOI DEVICES; LPCVD;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SOI (Silicon on Insulator) is an ideal material for developing high speed complementary metal-oxide-semiconductor and three dimensional large scale integrated circuits. SOI prepared by melt regrowth methods with laser beams, electron beams and moving graphite strip heaters has good quality and is suitable for conventional
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页码：1070 / 1073
页数：4
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