Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

被引：0

作者：

郝昕 ^{[1
]}

陈远富 ^{[1
]}

李萍剑 ^{[1
]}

王泽高 ^{[1
]}

刘竞博 ^{[1
]}

贺加瑞 ^{[1
]}

樊睿 ^{[1
]}

孙继荣 ^{[2
]}

张万里 ^{[1
]}

李言荣 ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

[2] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

来源：

Chinese Physics B | 2012年 / 04期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

epitaxial graphene; thickness; morphology; graphitization temperature;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

摘要：

Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H–SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.

引用

页码：442 / 445

页数：4

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