Self-assembled InAs/GaAs quantum dots and quantum dot laser

被引：0
|
作者：
王占国
刘峰奇
梁基本
徐波
机构：
[1] Laboratory of Semiconductor Materials Science
[2] Chinese Academy of Sciences
[3] China
[4] Beijing 100083
[5] Institute of Semiconductors
来源：
Science China Mathematics | 2000年 / 08期
关键词：
quantum dot; spacial ordering; quantum dot laser;
D O I：
暂无
中图分类号：
O432.12 [];
学科分类号：
070207 ; 0803 ;
摘要：
Systematic study of molecular beam epitaxy-grown self-assembled ln(Ga)As/GaAs, In-AlAs/AlGaAs/GaAs, and InAs/InAIAs/lnP quantum dots (QDs) is demonstrated. By adjusting growth conditions, surprising alignment, preferential elongation, and pronounced sequential coalescence of dots under the specific condition are realized. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 1 W is achieved from vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm2. An RT CW output power of 0.53 W ensures at least 3 000 h lasing (only drops 0.83 db). This is one of the best results ever reported.
引用
收藏
页码：861 / 870
页数：10
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