Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

被引：0
|
作者：
李金伦 [1 ,2 ]
崔少辉 [1 ]
徐建星 [2 ,3 ]
崔晓然 [2 ,4 ]
郭春妍 [2 ,5 ]
马奔 [2 ,6 ]
倪海桥 [2 ,6 ]
牛智川 [2 ,6 ]
机构：
[1] Department of Missile Engineering,Shijiazhuang Campus,Army Engineering University
[2] State Key Laboratory for Superlattices,Institute of Semiconductors,Chinese Academy of Sciences(CAS)
[3] Microsystem & Terahertz Research Center,China Academy of Engineering Physics
[4] Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory,Xidian University
[5] Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Sciences,Xi'an Institute of Optics and Precision Mechanics
[6] College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences
来源：
Chinese Physics B | 2018年 / 04期
基金：
中国国家自然科学基金;
关键词：
THz detector; high electron mobility transistor; two-dimensional electron gas; InP;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The samples of In;Ga;As/In;Al;As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In;Ga;As/In;Al;As 2DEG channel structures with mobilities as high as 10289 cm;/V·s（300 K）and42040 cm;/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10;/cm;and 2.502×10;/cm;,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.
引用
收藏
页码：367 / 372
页数：6
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