Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

被引：0

作者：

王波 ^{[1
,2
]}

宿世臣 ^{[1
]}

何苗 ^{[1
]}

陈弘 ^{[2
]}

吴汶波 ^{[1
]}

张伟伟 ^{[1
]}

王巧 ^{[1
]}

陈虞龙 ^{[1
]}

高优 ^{[1
]}

张力 ^{[1
]}

朱克宝 ^{[1
]}

雷严 ^{[1
]}

机构：

[1] Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Materials and Technology,South China Normal University

[2] Key Laboratory for Renewable Energy,Chinese Academy of Sciences,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condense Matter Physics,Institute of Physics,Chinese Academy of Sciences

来源：

Chinese Physics B | 2013年 / 10期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

GaN; light-emitting diode(LED); undercut;

D O I：

暂无

中图分类号：

TN312.8 []; TN305.7 [光刻、掩膜];

学科分类号：

0803 ;

摘要：

We use a simple and controllable method to fabricate GaN-based light-emitting diodes(LEDs) with 22?undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching(ICP-RIE).Our experiment results show that the output powers of the LEDs with 22?undercut sidewalls are 34.8 mW under a 20-mA current injection,6.75% higher than 32.6 mW,the output powers of the conventional LEDs under the same current injection.

引用

页码：449 / 452

页数：4

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