Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission

被引：0
|
作者：
Ying Yu
Guo-Wei Zha
Xiang-Jun Shang
Shuang Yang
Ban-Quan Sun
Hai-Qiao Ni
Zhi-Chuan Niu
机构：
[1] State Key laboratory for Superlattice and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences
[2] State Key Laboratory of Optoelectronic Materials and Technologies,School of electronics and information technology,Sun Yat-sen University
[3] College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences
[4] Synergetic Innovation Center of Quantum Information& Quantum Physics,University of Science and Technology of China
来源：
NationalScienceReview | 2017年 / 4卷 / 02期
基金：
中国国家自然科学基金;
关键词：
self-assembled nanowires; quantum dots; single photon emitters; molecular beam epitaxy;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
In this chapter, we discuss the epitaxial growth of self-assembled quantum dots(QDs) in GaAs nanowires(NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/Al GaAs core–shell NWs, branched GaAs NWs and tailored nanostructured morphologies on the NW facets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NW facet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single Al GaAs quantum ring(QR) on the NW facet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical ibers to achieve all-iber-output single-photon sources for potential application in quantum integrated networks.
引用
收藏
页码：196 / 209
页数：14
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