Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on van der Waals A-Type Antiferromagnet CrSBr

被引：0

作者：

兰贵彬 ^{[1
,2
]}

许洪军 ^{[1
,3
]}

张雨 ^{[1
,2
]}

程琛 ^{[1
]}

何斌 ^{[1
,2
]}

李嘉辉 ^{[1
,2
]}

何聪丽 ^{[4
]}

万蔡华 ^{[1
,2
,3
]}

丰家峰 ^{[1
,2
]}

魏红祥 ^{[1
,2
]}

张佳 ^{[5
]}

韩秀峰 ^{[1
,2
,3
]}

于国强 ^{[1
,2
,3
]}

机构：

[1] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences

[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

[3] Songshan Lake Materials Laboratory

[4] Institute of Advanced Materials, Beijing Normal University

[5] School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology

来源：

Chinese Physics Letters | 2023年 / 05期

基金：

中国国家自然科学基金; 美国国家科学基金会; 北京市自然科学基金;

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices. Among them, magnetic tunnel junctions(MTJs) based on A-type antiferromagnets, such as CrI3, possess record-high tunneling magnetoresistance(TMR) because of the spin filter effect of each insulating unit ferromagnetic layer. However, the relatively low working temperature and the instability of the chromium halides hinder applications of this system. Using a different technical scheme,we fabricated the MTJs based on an air-stable A-type antiferromagnet, CrSBr, and observed a giant TMR of up to 47000% at 5 K. Meanwhile, because of a relatively high Néel temperature of CrSBr, a sizable TMR of about 50% was observed at 130 K, which makes a big step towards spintronic devices at room temperature. Our results reveal the potential of realizing magnetic information storage in CrSBr-based spin-filter MTJs.

引用

页码：160 / 165

页数：6

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