Variations in the characteristics of CdxZn1-xS films deposited with little Cd-containing solutions

被引：0
|
作者：
WANG Yifan [1 ]
XUE Yuming [1 ]
WANG Zhiyong [1 ]
WEN Binbin [1 ]
XIE Xin [1 ]
Lü Chaoqun [1 ]
机构：
[1] Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology
来源：
Optoelectronics Letters | 2023年 / 19卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TB383.2 []; TM914.4 [太阳能电池];
学科分类号：
070205 ; 080501 ; 080502 ; 1406 ;
摘要：
In order to prepare CdxZn1-xS films with lower cadmium content and better performance as a buffer layer for copper indium gallium selenide(CIGS) solar cells, the performance of CdxZn1-xS films deposited in a mixture of solutions containing extremely low cadmium sources was systematically investigated by chemical bath deposition(CBD) with the synergy of chemical experiments and numerical simulations. The experimental results show that the films have the best overall performance at a cadmium source condition of 0.007 M.
引用
收藏
页码：359 / 363
页数：5
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