Segregations and desorptions of Ge atoms in nanocomposite Si1-xGex films during high-temperature annealing

被引：0

作者：

汪煜 ^{[1
]}

杨濛 ^{[1
]}

王刚 ^{[1
]}

魏晓旭 ^{[1
]}

王军转 ^{[1
]}

李昀 ^{[1
]}

左则文 ^{[2
]}

郑有炓 ^{[1
]}

施毅 ^{[1
]}

机构：

[1] Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University

[2] College of Physics and Electronics Information, Anhui Normal University

来源：

Chinese Physics B | 2017年 / 26卷 / 12期

关键词：

Si1-xGex; annealing; segregation; desorption;

D O I：

暂无

中图分类号：

O484 [薄膜物理学];

学科分类号：

080501 ; 1406 ;

摘要：

Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition(jet-ICPCVD).The segregations and desorptions of Ge atoms,which dominate the structural evolutions of the films during high-temperature annealing,are investigated.When the annealing temperature(Ta)is 900~℃,the nanocomposite Si1-xGex films are well crystallized,and nanocrystals(NCs)with the core-shell structure form in the films.After being annealed at 1000~℃(above the melting point of bulk Ge),Ge atoms accumulate on the surfaces of Ge-rich films,whereas pits appear on films with lower Ge content,resulting from desorption.Meanwhile,voids are observed in the films.A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.

引用

页码：443 / 447

页数：5

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