Property improvement of multilayer TiN/Ti films with C~+ implantation

被引:0
|
作者
赵志勇
张通和
梁宏
张荟星
张孝吉
机构
[1] Beijing 100875
[2] China
[3] Institute of Low Energy Nuclear Physics
[4] Radiation Beam and Materials Engineering Laboratory Beijing Normal University
基金
中国国家自然科学基金;
关键词
MEVVA ion implantation; C ion implantation; TiN; multilayer films; phase transition; hardening mechanism;
D O I
暂无
中图分类号
O484 [薄膜物理学];
学科分类号
080501 ; 1406 ;
摘要
Using the MEVVA ion source, carbon ions have been implanted in TiN coatings deposited by multi-arc ion plating The Vickers microhardness of the C+ -implanted TiN films increased with the increase in the ion flux and dose. X-ray diffraction (XRD) analysis showed that the TiC phases had been formed in the films. In addition, the films had the preferred growth orientations of TiN and TiC, both of which were (111) orientation after annealing at 500℃ for 30 min. Auger electron spectra analysis indicated that C+ -implanted profile was in typical Gaussian-like distribution in single films. The distribution with multipeaks of C atoms was obtained in multi-layer TiN/Ti. The possibility of the multilayer films (Ti (C, N)/TiN/Ti(C, N)/TiN and Ti(C, N)/TiC/Ti(C, N)/TiC) forming using the C-implanted TiN/Ti films is presented for the first time.
引用
收藏
页码:449 / 454
页数:6
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