Photoluminescence Properties of Si1-xGex/Si Strained Layer Structures

被引：0
|
作者：
PENG Yingcai(Hebei University
机构：
来源：
SemiconductorPhotonicsandTechnology | 1996年 / 03期
关键词：
Strained Layer Superlattices; Photoluminescence Properties; Optoelectronic Devices; Quantum Wells;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
ＰｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅＰｒｏｐｅｒｔｉｅｓｏｆＳｉ;Ｇｅ;／ＳｉＳｔｒａｉｎｅｄＬａｙｅｒＳｔｒｕｃｔｕｒｅｓ￥ＰＥＮＧＹｉｎｇｃａｉ（ＨｅｂｅｉＵｎｉｖｅｒｓｉｔｙ，Ｂａｏｄｉｎｇ０７１００２．ＣＨＮ）Ａｂｓｔｒａｃｔ：Ｔｈｅ...
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页码：168 / 174
页数：7
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