Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

被引:0
|
作者
周旭升 [1 ]
崔妮 [1 ]
祖继锋 [1 ]
龚尚庆 [1 ]
机构
[1] Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences
关键词
Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells; Rev;
D O I
暂无
中图分类号
O471.1 [半导体量子理论];
学科分类号
070205 ; 080501 ; 0809 ; 080903 ;
摘要
We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects,respectively.It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashortπpulses,an almost complete population inversion exists if the propagation effects are not considered;while no complete population inversion occurs in the presence of propagation effects. Furthermore,the magnitude of the impact of propagation effects may be controlled by varying the carrier density.
引用
收藏
页码:689 / 692
页数:4
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