Modeling of metal–oxide semiconductor: Analytical bond-order potential for cupric oxide

被引:0
|
作者
李坤 [1 ]
杨雯 [2 ]
魏计林 [1 ]
杜诗文 [2 ]
李永堂 [2 ]
机构
[1] College of Applied Science, Taiyuan University of Science and Technology
[2] College of Materials Science and Engineering, Taiyuan University of Science and Technology
基金
中国国家自然科学基金;
关键词
cupric oxide; analytical bond-order potential; density functional theory;
D O I
暂无
中图分类号
O562 [原子物理学];
学科分类号
070203 ; 1406 ;
摘要
Atomistic potentials for cupric element and cupric oxide are derived based on the analytical bond-order scheme that was presented by Brenner [Brenner D W, "Erratum: Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films", Phys. Rev. B 1992, 46 1948]. In this paper, for the pure cupric element, the energy and structural parameters for several bulk phases as well as dimmer structure are well reproduced. The reference data are taken from our density functional theory calculations and the available experiments. The model potential also provides a good description of the bulk properties of various solid structures of cupric oxide compound structures, including cohesive energies, lattice parameters, and elastic constants.
引用
收藏
页码:512 / 516
页数:5
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