Design of Self-Assembled Monolayer in Tungsten Diselenide Bilayer for Exciton Dissociation

被引:0
|
作者
Lee, Noki [1 ]
Lee, Jeongwon [2 ]
Oh, Sehoon [1 ]
Lee, Ryong-Gyu [2 ]
Yeo, Hyeonwoo [2 ]
Kim, Yong-Hoon [2 ]
Lee, Jaichan [1 ]
机构
[1] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[2] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
self-assembled monolayer; tungsten diselenide bilayer; exciton dissociation; first-principles calculations; band alignment; ULTRAFAST CHARGE-TRANSFER; TOTAL-ENERGY CALCULATIONS; MOLECULAR-DYNAMICS; PYXAID PROGRAM; SEPARATION; MECHANISM; SCHEMES;
D O I
10.1021/acsnano.4c09000
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Transition metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation self-powered photodetectors due to their distinct optoelectronic properties, including strong light-matter interactions. However, their high exciton binding energies impede efficient exciton dissociation, hindering viable photodetector applications. This study, based on first-principles calculations, introduces a design approach featured by the asymmetrically enclosed structure of the TMD bilayer, i.e., two different self-assembled monolayers (SAMs) asymmetrically attached to each side of a tungsten diselenide bilayer by varying electron-donating and electron-withdrawing groups in SAMs. Compared to the electron-donating and electron-withdrawing tendencies, we demonstrate that the surface work function of the SAM is a crucial macroscopic parameter in fine-tuning the band offset without trap formation with a large degree of freedom. Optimizing the work function achieves trap-free exciton dissociation, establishing a type-II band alignment and a sufficient built-in electric field within the bilayer. This design approach offers not only a design strategy for two-dimensional (2D) self-powered photodetectors but also a guide to interface engineering of TMDs utilizing SAMs for integration into low-power applications.
引用
收藏
页数:9
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