Magnetron sputtered silicon thin films for solar cell applications

被引:0
|
作者
Szindler, Marek [1 ]
Szindler, Magdalena M. [2 ]
Lukaszkowicz, Krzysztof [2 ]
Matus, Krzysztof [3 ]
Nuckowski, Pawel [3 ]
机构
[1] Silesian Tech Univ, Fac Mech Engn, Sci & Didact Lab Nanotechnol & Mat Technol, Ul Towarowa 7, PL-44100 Gliwice, Poland
[2] Silesian Tech Univ, Dept Engn Mat & Biomat, Ul Konarskiego 18a, PL-44100 Gliwice, Poland
[3] Silesian Tech Univ, Mat Res Lab, Ul Konarskiego 18a, PL-44100 Gliwice, Poland
关键词
surface engineering; thin films; magnetron sputtering; silicon; solar cells; POLYCRYSTALLINE SILICON;
D O I
10.24425/opelre.2024.151992
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the important directions of research in photovoltaics is the development of new thinfilm technology, which can replace the currently used, more expensive bulk silicon technology. The article discusses the findings from research focused on optimizing the parameters for the deposition of silicon thin films with P-type electrical conductivity for applications in photovoltaics. The growth rate was determined depending on the change in substrate temperature using reflectometry and the influence of deposition time on optical properties was determined using UV/VIS spectroscopy. Photovoltaic structures were made on substrates with an ITO layer and their electrical parameters were measured. The authors applied the magnetron sputtering method to deposit the layers, selecting it over the commercially used the chemical vapor deposition (CVD) method. This replacement could alleviate the necessity for high temperatures and broaden the potential applications of thinfilm solar cells.
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页数:6
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