Multi-channel AlN/GaN Schottky barrier diodes

被引：0

作者：

Li, Hanchao ^{[1
]}

Wang, Yue ^{[2
]}

Xie, Qingyun ^{[3
,4
]}

Xie, Hanlin ^{[3
,4
]}

Tan, Hui Teng ^{[2
]}

Dalapati, Pradip ^{[1
]}

Liu, Siyu ^{[1
,5
]}

Ranjan, Kumud ^{[3
,4
]}

Foo, Siewchuen ^{[6
]}

Arulkumaran, Subramaniam ^{[6
]}

Gan, Chee Lip ^{[7
]}

Ng, Geok Ing ^{[1
,2
,3
,4
,5
,6
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore

[2] Singapore MIT Alliance Res & Technol, Low Energy Elect Syst, 1 CREATE Way,10-01 CREATE Tower, Singapore 138602, Singapore

[3] ASTAR, Natl GaN Technol Ctr NGTC, Innovis 08-02, Singapore 138634, Singapore

[4] ASTAR, Inst Microelect IME, Innovis 08-02, Singapore 138634, Singapore

[5] Nanyang Technol Univ, Energy Res Inst, 1 CleanTech Loop,06-04, Singapore 637141, Singapore

[6] Nanyang Technol Univ, Temasek Labs NTU, 50 Nanyang Dr, Singapore 637553, Singapore

[7] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2025年 / 18卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

GaN Schottky Barrier Diodes; multi-channel; AlN/GaN; 2DEG; POWER; ALGAN/GAN; GATE; HEMTS; TRANSISTORS; KV; SI;

D O I：

10.35848/1882-0786/ada2d8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low Rsh (69 Omega/square), thanks to a high Ns of 6.7 x 1013 cm-2. The SBDs exhibit a low on voltage of 0.5 V, a small forward voltage of 1.1 V, and high current of 1050 mA mm-1. Temperature-dependent I-V characteristics of the proposed device revealed that both thermionic emission and tunneling contributed to the current transport. This work paves the way for development of high-performance multi-channel AlN/GaN devices for RF and power applications.

引用

页数：6

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