共 50 条
Electrically switchable ferrovalley, anomalous valley Hall effect and intrinsic circular dichroism in two-dimensional antiferromagnets
被引:0
|作者:
Zhang, Dehe
[1
,2
]
Zhou, Wenzhe
[1
,2
]
Zheng, Guibo
[1
,2
]
Li, Aolin
[3
]
Chen, Yu
[1
,2
]
Ouyang, Fangping
[1
,2
,3
,4
,5
]
机构:
[1] Cent South Univ, Sch Phys, Hunan Key Lab Supermicrostruct & Ultrafast Proc, Changsha 410083, Peoples R China
[2] Cent South Univ, Hunan Key Lab Nanophoton & Devices, Changsha 410083, Peoples R China
[3] Xinjiang Univ, Sch Phys & Technol, Urumqi 830046, Peoples R China
[4] Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
[5] Cent South Univ, Powder Met Res Inst, Changsha 410083, Peoples R China
基金:
中国博士后科学基金;
中国国家自然科学基金;
关键词:
Monolayer antiferromagnet;
Ferrovalley;
Electrical control;
First-principle calculation;
SPIN;
POLARIZATION;
TRANSPORT;
TORQUE;
D O I:
10.1016/j.cjph.2025.01.015
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
The manipulation of ferrovalley and anomalous valley Hall effect (AVHE) holds significant potential for applications in multifunctional valleytronic devices. Due to the absence of time inversion symmetry, research on ferrovalley and AVHE has primarily focused on two-dimensional ferromagnets. In this work, by analyzing the theoretical model, we propose a general principle for inducing and reversing the ferrovalley in two-dimensional antiferromagnets under an electric field. By conducting first-principle calculations, the switchable ferrovalley and AVHE are demonstrated in two-dimensional antiferromagnet V2SeCl2 with intrinsic circular dichroism. The ferrovalley and AVHE can be regulated and reversed by modulating the electric field. Furthermore, for nonvolatile manipulative ferrovalley and AVHE, a two-dimensional ferroelectric In2S3 is used as a substrate instead of the electric field. The AVHE in multiferroic heterostructure V2SeCl2/ In2S3 can be availably switched on or off by reversing the ferroelectric polarization of the substrate In2S3. The present results are expected to promote the application of two-dimensional antiferromagnets in valleytronics.
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页码:153 / 162
页数:10
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