Heteroepitaxial growth of PMN-PT thin films on SrTiO3 buffered III-V semiconductor GaAs by pulsed laser deposition

被引：1
|
作者：
Du, Xiaona [1 ,2 ,3 ]
Ning, Xin [3 ]
机构：
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Renewable Energy Convers & Storage Ctr, Solar Energy Convers Ctr, Tianjin 300350, Peoples R China
[2] Key Lab Photoelect Thin Film Devices & Technol Tia, Tianjin 300350, Peoples R China
[3] Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300350, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2025年 / 653卷
关键词：
Epitaxial growth; PMN-PT; Thin films; Ferroelectricity; Semiconductor GaAs; Pulsed laser deposition; GIANT PIEZOELECTRICITY;
D O I：
10.1016/j.jcrysgro.2025.128070
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films were epitaxially grown on (001)-oriented SrTiO3 buffered III-V semiconductor GaAs substrates by pulsed laser deposition. Detailed microstructural investigations of the films were carried out using X-ray diffraction, atomic force microscopy and transmission electron microscopy. Local piezoresponse force microscopy hysteresis loops confirm the ferroelectric nature of the PMN-PT thin films on GaAs. The results have demonstrated the practicality of integrating epitaxial PMN-PT films on semiconductor GaAs, which may pave the way to develop III-V semiconductor based opto-mechanical devices.
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页数：5
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