Inkjet-printed carbon nanotube-MoS2 heterojunction p-n diodes

The p-n junction diode and field-effect transistor are foundational elements in modern electronics and optoelectronics. While high-performance field-effect devices have been realized using monolayered materials and their heterostructures, there has been a notable absence of p-n heterojunction diodes derived from inkjet-printed twodimensional (2D) materials, which may lead to the development of complex electronic and optoelectronic circuits. This study addresses this gap by detailing the development and characterization of heterojunction p-n diodes fabricated through the inkjet printing of carbon nanotubes (CNTs) and molybdenum disulfide (MoS2). The use of inkjet printing technology for both CNTs and MoS2 allows for precise, scalable, and cost-effective fabrication. The resulting heterojunction diodes exhibit excellent diode behavior, with a rectification ratio exceeding 103. Additionally, the diode shows significant photoconductive properties, with a rapid photoresponse time of approximately 2 mu s. This swift photoresponse is essential for high-speed optoelectronic applications, making the diode a promising component in advanced electronic systems. The study underscores the potential of inkjet printing technology to revolutionize the production of sophisticated, low-cost electronic devices with superior performance metrics, particularly in terms of photoresponse efficiency and speed. The integration of CNTs and MoS2 via inkjet printing not only streamlines the manufacturing process but also enhances the functional properties of the heterojunction diodes, positioning it as a viable candidate for future optoelectronic applications.