LDMOS of 34mΩ-cm2 On-Resistance with 700V Breakdown Voltage

被引：0

作者：

Wei, Tao ^{[1
,2
]}

机构：

[1] PowerWyse Shenzhen Co Ltd, Shenzhen, Peoples R China

[2] PowerWyse Inc, Santa Clara, CA 95054 USA

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

MOSFET; LDMOS; on resistance; R-dson; Breakdown voltage; Integrated Circuits; power management; AccuMOS (R);

D O I：

10.1109/ISPSD59661.2024.10579641

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have designed and fabricated an Accumulation Lateral Diffused MOSFET (LDMOS) (AccuMOS (R)), which incorporates multiple electrodes over drift region and regulated by an integrated circuit (IC). A record low specific R-dson of 34m Omega-cm(2) with breakdown voltage (V-B) of 700V has been obtained. Devices were tested in switching power applications and performance was satisfactory. Current LDMOS structure is scalable and performance is expected to progress with smaller lithographic features. Analysis suggests a 3-dimensional fin-FET structure could potentially reduce R-dson to below 6m Omega-cm(2) for V-B=700V.

引用

页码：398 / 401

页数：4

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