A Comparative Analysis of Statistical Modeling and Machine Learning Techniques for Predicting the Lifetime of Light Emitting Diodes From Accelerated Life Testing

被引:0
|
作者
Alsharabi, Reem [1 ]
Almalki, Leen [1 ]
Abed, Fidaa [1 ]
Majid, M. A. [2 ]
Kittaneh, Omar A. [3 ]
机构
[1] Effat Univ, Dept Comp Sci, Jeddah 21478, Saudi Arabia
[2] Effat Univ, Dept Elect & Comp Engn, Jeddah 21478, Saudi Arabia
[3] Effat Univ, Dept Sci Math & Technol, Jeddah 21478, Saudi Arabia
关键词
Light emitting diodes; Stress; Humidity; Standards; Predictive models; Degradation; Temperature measurement; Life estimation; Weibull distribution; Temperature distribution; Accelerated aging; accelerated life testing (ALT); Arrhenius relationship; goodness-of-fit tests; Intel model; inverse power law; light emitting diode (LED); lognormal distribution; machine learning (ML); MLE; peck model;
D O I
10.1109/TED.2025.3535849
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work uses multivariable life stress models to revisit the catastrophic failure of high-brightness blue light emitting diodes (LEDs) under accelerated life testing (ALT). The stress factors, current, temperature, relative humidity (RH), and their interactions are considered in lifetime studies. First, we show that the lognormal distribution fits the experimental data much better than the Weibull distribution using the standard Kolmogorov-Smirnov test. Furthermore, the best life-stress relationship is the Intel model rather than the peck model used by Nogueira et al. (2016). Additionally, based on the accelerated data, machine learning (ML) techniques are employed to predict the lifetime of LEDs under normal operating conditions. However, the study highlights the limitations of ML in accurately predicting lifetime.
引用
收藏
页码:1864 / 1871
页数:8
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